Avalanche breakdown in a diode occurs when a. Potential barrier is reduced to zero. b. Forward current exceeds certain value. c. Reverse bias exceeds a certain value. d. None of these

Avalanche breakdown in a diode occurs when
a. Potential barrier is reduced to zero.
b. Forward current exceeds certain value.
c. Reverse bias exceeds a certain value.
d. None of these
by

1 Answer

Answer :

c. Reverse bias exceeds a certain value.
by

Related questions

When a reverse bias is applied to a diode, it will a. Raise the potential barrier b. Lower the potential barrier c. Increases the majority-carrier a current greatly d. None of these

Description : When a reverse bias is applied to a diode, it will a. Raise the potential barrier b. Lower the potential barrier c. Increases the majority-carrier a current greatly d. None of these

Last Answer : a. Raise the potential barrier

A forward potential of 10V is applied to a Si diode. A resistance of 1 KΩ is also in series with the diode. The current is a. 10 mA b. 9.3 mA c. 0.7 mA d. 0

Description : A forward potential of 10V is applied to a Si diode. A resistance of 1 KΩ is also in series with the diode. The current is a. 10 mA b. 9.3 mA c. 0.7 mA d. 0

Last Answer : b. 9.3 mA

When the diode is forward biased, it is equivalent to a. An off switch b. An On switch c. A high resistance d. None of the above

Description : When the diode is forward biased, it is equivalent to a. An off switch b. An On switch c. A high resistance d. None of the above

Last Answer : b. An On switch

Junction breakdown occurs: a) With forward bias b) With reverse bias c) Under high temperature condition d) Because of excess heating of the diode

Description : Junction breakdown occurs: a) With forward bias b) With reverse bias c) Under high temperature condition d) Because of excess heating of the diode

Last Answer : Ans: B

The arrow direction in the diode symbol indicates a. Direction of electron flow. b. Direction of hole flow (Direction of conventional current) c. Opposite to the direction of hole flow d. None of the above

Description : The arrow direction in the diode symbol indicates a. Direction of electron flow. b. Direction of hole flow (Direction of conventional current) c. Opposite to the direction of hole flow d. None of the above

Last Answer : b. Direction of hole flow (Direction of conventional current)

In the diode equation, the voltage equivalent of temperature is a. 11600/T b. T/11600 c. T x 11600 d. 11600/T2

Description : In the diode equation, the voltage equivalent of temperature is a. 11600/T b. T/11600 c. T x 11600 d. 11600/T2

Last Answer : b. T/11600

The knee voltage (cut in voltage) of Si diode is a. 0.2 V b. 0.7 V c. 0.8 V d. 1.0 V

Description : The knee voltage (cut in voltage) of Si diode is a. 0.2 V b. 0.7 V c. 0.8 V d. 1.0 V

Last Answer : b. 0.7 V

During avalanche effect breakdown, what limits current flow through the diode?

Description : During avalanche effect breakdown, what limits current flow through the diode?

Last Answer : an external current-limiting resistor

When using an ohmmeter to test a semiconductor diode, you find a low resistance in both the forward and reverse bias directions. This indicates that the diode has a/an ____________. A. open B. short C. good resistive quality D. good capacitive quality

Description : When using an ohmmeter to test a semiconductor diode, you find a low resistance in both the forward and reverse bias directions. This indicates that the diode has a/an ____________. A. open B. short C. good resistive quality D. good capacitive quality

Last Answer : Answer: B

A device used to avoid the relay destroying the op-amp is A. diode B. LED C. reverse bias diode D. forward biased diode

Description :  A device used to avoid the relay destroying the op-amp is A. diode B. LED C. reverse bias diode D. forward biased diode

Last Answer : reverse bias diode

Photo diode operates in the _______ condition (a) Forward bias (b) null (c) both a & d (d) reverse bias

Description : Photo diode operates in the _______ condition (a) Forward bias (b) null (c) both a & d (d) reverse bias

Last Answer : (d) reverse bias

Define i)P-N junction diode ii) Depletion layer iii)Forward bias iv)Reverse bias of P-N junction diode

Description : Define i)P-N junction diode ii) Depletion layer iii)Forward bias iv)Reverse bias of P-N junction diode

Last Answer : i)P-N junction diode: It is a semiconductor device in which half of its region is P-type and other half is N-type.  ii) Depletion layer: The region where free electrons and free holes are absent ... and negative terminal is connected to p-side of p-n junction diode, it is said to be reverse bias.

In forward bias, the width of potential barrier __________ (a) Increases (b) decreases (c) remains same (d) no effect

Description : In forward bias, the width of potential barrier __________ (a) Increases (b) decreases (c) remains same (d) no effect

Last Answer : (b) decreases

What causes dc bias energy to be absorbed by avalanche electrons and given up to the microwave field applied to an avalanche transit-time diode?

Description : What causes dc bias energy to be absorbed by avalanche electrons and given up to the microwave field applied to an avalanche transit-time diode?

Last Answer : The negative-resistance property.

On increasing the reverse bias to a large value in a p-n junction diode current (a) Increases slowly (b) Remains fixed (c) Suddenly increases (d) Decreases slowly

Description : On increasing the reverse bias to a large value in a p-n junction diode current (a) Increases slowly (b) Remains fixed (c) Suddenly increases (d) Decreases slowly

Last Answer : (c) Suddenly increases

For highly doped diode: a) Zener breakdown is likely to take place b) Avalanche breakdown is likely to take place c) Either (a) or (b) can take place d) Neither (a) nor (b) can take place

Description : For highly doped diode: a) Zener breakdown is likely to take place b) Avalanche breakdown is likely to take place c) Either (a) or (b) can take place d) Neither (a) nor (b) can take place

Last Answer : Ans: A

Component 'CR1' shown in the illustration is called a/an _______________. EL-0085 A. avalanche diode B. Zener diode C. breakdown diode D. all of the above

Description : Component 'CR1' shown in the illustration is called a/an _______________. EL-0085 A. avalanche diode B. Zener diode C. breakdown diode D. all of the above

Last Answer : Answer: D

Which breakdown theory explains the action that takes place in a heavily doped PN-junction with a reverse bias of less than 5 volts?

Description : Which breakdown theory explains the action that takes place in a heavily doped PN-junction with a reverse bias of less than 5 volts?

Last Answer : Zener effect.

Avalanche break down in a semiconductor diode occurs when

Last Answer : Avalanche break down in a semiconductor diode occurs when Reverse bias exceeds a certain value

Explain with neat sketch construction of PIN Diode. Draw its characteristics in reverse bias mode.

Description : Explain with neat sketch construction of PIN Diode. Draw its characteristics in reverse bias mode. 

Last Answer : Construction A PIN diode is made up of three semiconductor materials; two heavily doped P- and N- type material separated by an intrinsic (undoped) semiconductor (I) as shown in above figure ... . This advantage allows the PIN diode to process even weak signals.  Characteristics

A diode in which the change in reverse bias voltage varies the capacitance is called as

Description : A diode in which the change in reverse bias voltage varies the capacitance is called as A) Varactor diode B) Switching diode C) Tunnel diode D) Zener-diode  

Last Answer : A diode in which the change in reverse bias voltage varies the capacitance is called as Varactor diode

When reverse bias is applied to a junction diode, it

Description : When reverse bias is applied to a junction diode, it  1.increases the potential barrier 2.decreases the potential barrier 3.greatly increases the minority carrier current 4.greatly increases the majority carrier current 

Last Answer : When reverse bias is applied to a junction diode, it increases the potential barrier 

Explain the forward bias characteristics of a P-N Junction diode.

Description : Explain the forward bias characteristics of a P-N Junction diode. 

Last Answer : forward and reverse characteristics of P-N junction diode.

To turn a UJT ON, the forward bias on emitter diode should be:

Description : To turn a UJT ON, the forward bias on emitter diode should be:  1. more than the peak point voltage 2. less than the peak point voltage 3. Equal to the peak point voltage 4. Equal to the stand - off voltage  

Last Answer : To turn a UJT ON, the forward bias on emitter diode should be: more than the peak point voltage 

How much time a diode takes to switch ON in forward bias

Description : How much time a diode takes to switch ON in forward bias condition.

Last Answer : t=0 sec.

can zener diode be used in forward bias?

Last Answer : Yes it can be, and it will act like a normal PN junction diode. The characteristic of ZENER diode is exactly same as PN junction diode in forward Bias.

In the illustration, the small battery and Rb are in the circuit to apply ________. EL-0022 A. forward bias to the emitter-base B. reverse bias to the emitter-base C. a 'reference charge' on the input capacitor D. a buffer between the input ground and the emitter ground

Description : In the illustration, the small battery and Rb are in the circuit to apply ________. EL-0022 A. forward bias to the emitter-base B. reverse bias to the emitter-base C. a 'reference charge' on the input capacitor D. a buffer between the input ground and the emitter ground

Last Answer : Answer: A

In the illustration, the large battery and R(L) are in the circuit to ________. EL-0022 A. forward bias the emitter-base B. reverse bias the emitter-base C. forward bias the emitter/collector D. reverse bias the emitter/collector

Description : In the illustration, the large battery and R(L) are in the circuit to ________. EL-0022 A. forward bias the emitter-base B. reverse bias the emitter-base C. forward bias the emitter/collector D. reverse bias the emitter/collector

Last Answer : Answer: D

Both LEDs and ILDs operate correctly with ∙ A. forward bias ∙ B. reverse bias ∙ C. neither forward nor reverse bias ∙ D. either forward or reverse bias

Description : Both LEDs and ILDs operate correctly with ∙ A. forward bias ∙ B. reverse bias ∙ C. neither forward nor reverse bias ∙ D. either forward or reverse bias

Last Answer : A. forward bias

Photodiodes operate properly with ∙ A. forward bias ∙ B. reverse bias ∙ C. neither forward nor reverse bias ∙ D. either forward or reverse bias

Description : Photodiodes operate properly with ∙ A. forward bias ∙ B. reverse bias ∙ C. neither forward nor reverse bias ∙ D. either forward or reverse bias

Last Answer : ∙ B. reverse bias

Photodiodes operate property with ∙ a. Forward bias ∙ b. Reverse bias ∙ c. Neither A or B ∙ d. Either A or B

Description : Photodiodes operate property with ∙ a. Forward bias ∙ b. Reverse bias ∙ c. Neither A or B ∙ d. Either A or B

Last Answer : ∙ b. Reverse bias

Both LEDs and ILDs operate correctly with ∙ a. Forward bias ∙ b. Reverse bias ∙ c. Neither A or B ∙ d. Either A or B

Description : Both LEDs and ILDs operate correctly with ∙ a. Forward bias ∙ b. Reverse bias ∙ c. Neither A or B ∙ d. Either A or B

Last Answer : a. Forward bias

Depletion region of a junction is formed _________ (a) during the manufacturing process (b) under forward bias (c) under reverse bias (d) when temperature varies

Description : Depletion region of a junction is formed _________ (a) during the manufacturing process (b) under forward bias (c) under reverse bias (d) when temperature varies

Last Answer : (a) during the manufacturing process

Process of conversion low voltage to high voltage is called _______ (a) Rectification (b)forward bias (c) reverse bias (d) amplification

Description : Process of conversion low voltage to high voltage is called _______ (a) Rectification (b)forward bias (c) reverse bias (d) amplification

Last Answer : (d) amplification

What is the difference between forward and reverse bias?

Description : What is the difference between forward and reverse bias?

Last Answer : Forward bias is a PN junction bias which allows current to flow through the junction. Forward bias decreases the resistance of the depletion layer. Reverse bias is a PN junction bias that allows only ... Positive polarity on the n-type material and negative polarity to the p-type material.

The reverse breakdown phenomenon in a zener diode is known as

Description : The reverse breakdown phenomenon in a zener diode is known as

Last Answer : The reverse breakdown phenomenon in a zener diode is known as Avalanche effect

Why can't the potential barrier of a diode be used as a voltage source?

Description : Why can't the potential barrier of a diode be used as a voltage source?

Last Answer : The potential barrier of a diode is caused by the movement ofelectrons to create holes. The electrons and holes create apotential barrier, but as this voltage will not supply current, itcannot be used as a voltage source.

While testing a semi-conductor diode with an ohmmeter, both the forward and reverse readings are almost in the infinity range. This would indicate that the unit is _____________. A. good B. open C. grounded D. shorted

Description : While testing a semi-conductor diode with an ohmmeter, both the forward and reverse readings are almost in the infinity range. This would indicate that the unit is _____________. A. good B. open C. grounded D. shorted

Last Answer : Answer: B

Compare avalanche and zener breakdown.

Description : Compare avalanche and zener breakdown.

Last Answer : Sr. No. Avalanche breakdown Zener breakdown 1 PN junction are lightly doped in avalanche breakdown PN junction are heavily doped in zener breakdown 2 The avalanche breakdown ... 4 Electron hole pairs are generated  Large number of holes and electrons are produced 

Describe avalanche and zener breakdown of PN junction with neat graph.

Description : Describe avalanche and zener breakdown of PN junction with neat graph.

Last Answer : Avalanche Breakdown It is observed in diodes having Vz> 8V. is called Avalanche Breakdown It occurs due to accelerating minority carriers. It shows gradual change. Breakdown voltage ... field. Breakdown is very sharp. Breakdown voltage decreases with increase in temperature 

Explain zener breakdown and avalanche breakdown.

Description : Explain zener breakdown and avalanche breakdown.

Last Answer : The Zener Breakdown and Avalanche Breakdown are two different mechanisms by which a PN junction breaks. The Zener and Avalanche breakdown both occur in diode under reverse bias. The avalanche breakdown ... in the PN junction and causes breakdown. The process is known as the Avalanche breakdown.

Which among the given statement is/are CORRECT. (a) Avalanche breakdown voltage increases with

Description : Which among the given statement is/are CORRECT. (a) Avalanche breakdown voltage increases with temperature (b) Zener breakdown voltage decreases with temperature A) Only (a) B) Only (b) C) Both (a) & (b) D) None of (a) & (b)

Last Answer : Which among the given statement is/are CORRECT. (a) Avalanche breakdown voltage increases with temperature (b) Zener breakdown voltage decreases with temperature A) Only (a) B) Only (b) C) Both (a) & (b) D) None of (a) & (b)

The potential difference set up across the depletion region is called (a) Absolute potential (b) neutral potential (c) reverse potential (d) potential barrier

Description : The potential difference set up across the depletion region is called (a) Absolute potential (b) neutral potential (c) reverse potential (d) potential barrier

Last Answer : (d) potential barrier

What is the doping level of an avalanche effect diode when compared to the doping level of a Zener-effect diode?

Description : What is the doping level of an avalanche effect diode when compared to the doping level of a Zener-effect diode?

Last Answer : The doping level of an avalanche effect diode is lower.

What is the junction arrangement of the original avalanche transit-time diode?

Description : What is the junction arrangement of the original avalanche transit-time diode?

Last Answer : Pnin.

Which of the following is the fastest light sensor? ∙ A. PIN photodiode ∙ B. Photovoltaic diode ∙ C. Photodiode ∙ D. Avalanche photodiode

Description : Which of the following is the fastest light sensor? ∙ A. PIN photodiode ∙ B. Photovoltaic diode ∙ C. Photodiode ∙ D. Avalanche photodiode

Last Answer : Avalanche photodiode

Which of the following is the fastest light sensor? ∙ A. PIN photodiode ∙ B. Photovoltaic diode ∙ C. Photodiode ∙ D. Avalanche photodiode

Description : Which of the following is the fastest light sensor? ∙ A. PIN photodiode ∙ B. Photovoltaic diode ∙ C. Photodiode ∙ D. Avalanche photodiode

Last Answer : D. Avalanche photodiode

Which of the following is the fastest light sensor ∙ a. PIN photodiode ∙ b. Photovoltaic diode ∙ c. Phototransistor ∙ d. Avalanche photodiode

Description : Which of the following is the fastest light sensor ∙ a. PIN photodiode ∙ b. Photovoltaic diode ∙ c. Phototransistor ∙ d. Avalanche photodiode

Last Answer : ∙ d. Avalanche photodiode

Which of the following is NOT a common light detector ∙ a. PIN photodiode ∙ b. Photovoltaic diode ∙ c. Photodiode ∙ d. Avalanche photodiode

Description : Which of the following is NOT a common light detector ∙ a. PIN photodiode ∙ b. Photovoltaic diode ∙ c. Photodiode ∙ d. Avalanche photodiode

Last Answer : ∙ b. Photovoltaic diode